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Abstract This study presents an experimentally validated demonstration of an inverse-optimized binary phase-only gallium oxide diffractive optical element (DOE). This DOE transforms an incident Gaussian beam into a square flat-top beam at the working plane. The design methodology for this binary phase-only DOE beam shaper is founded on an efficient process that integrates the modified Gerchberg-Saxton algorithm and the adjoint method. Experimental characterization of the fabricated device on a single crystal$$(\overline{2} \; 01)$$gallium oxide substrate is conducted at a wavelength of 532 nm, confirming its ability to transform an incident Gaussian beam into a focused square flat-top beam. Such a device holds significant promise for various high-power laser applications, notably in laser welding and similar domains. Furthermore, because of the ultrawide bandgap of gallium oxide, DOEs operating at shorter wavelengths in the UV are also possible based on this technique. 

We report the real-valued static and complex-valued quasi-static anisotropic permittivity parameters of rare-earth scandate orthorhombic single crystal GdScO3 (GSO), TbScO3 (TSO), and DyScO3 (DSO). Employing continuous-wave terahertz spectroscopy (0.2–1 THz), the complex permittivity was extracted using an anisotropic ambient-film-ambient model. Data obtained from multiple samples of the same oxides and different surface cuts were analyzed simultaneously. The zero-frequency limit of the modeled data indicates that at room temperature the real part of the dielectric tensor components for GSO are ɛa = 22.7, ɛb = 19.3, and ɛc = 28.1; for DSO, ɛa = 20.3, ɛb = 17.4, and ɛc = 31.1; and for TSO, ɛa = 21.6, ɛb = 18.1, and ɛc = 30.3, with a, b, and c crystallographic axes constituting the principal directions for the permittivity tensor. These results are in excellent agreement with expectations from theoretical computations and with scarcely available data from previous experimental studies. Furthermore, our results evidence a noticeable attenuation, which increases with frequency, and are very significant especially at the higher frequency end of the measurement and along the c-direction in all samples. We suggest the attenuation is most likely caused by the onset of absorption due to long-wavelength active optical phonon modes. These results are important for electronic and potential sub-terahertz applications (e.g., quarter-wave plate) benefiting from the large index contrast along different directions in these materials. 

Multilayer diffractive optical neural networks (DONNs) can perform machine learning (ML) tasks at the speed of light with low energy consumption. Decreasing the number of diffractive layers can reduce inevitable material and diffraction losses to improve system performance, and incorporating compact devices can reduce the system footprint. However, current analytical DONN models cannot accurately describe such physical systems. Here we show the ever-ignored effects of interlayer reflection and interpixel interaction on the deployment performance of DONNs through full-wave electromagnetic simulations and terahertz (THz) experiments. We demonstrate that the drop of handwritten digit classification accuracy due to reflection is negligible with conventional low-index THz polymer materials, while it can be substantial with high-index materials. We further show that one- and few-layer DONN systems can achieve high classification accuracy, but there is a trade-off between accuracy and model-system matching rate because of the fast-varying spatial distribution of optical responses in diffractive masks. Deep DONNs can break down such a trade-off because of reduced mask spatial complexity. Our results suggest that new accurate and trainable DONN models are needed to advance the development and deployment of compact DONN systems for sophisticated ML tasks. 

This work discusses the design and fabrication of a dual-plane terahertz (THz) hologram and an extended-depth-of-focus THz diffractive lens. The dual-plane THz hologram consists of 50 × 50 diffractive optical elements with identical element pixel size 1×1 mm, and the extended-depth-of-focus THz diffractive lens is designed with 25 concentric rings with identical ring width of 1 mm, resulting in same device dimension 50 mm × 50 mm. The height of the hologram pixels and concentric rings of the diffractive lens are optimized by nonlinear optimization algorithms with scalar diffraction theory based on Ray-Sommerfeld diffraction equation. Finite-Difference Time-Domain (FDTD) simulation results agree with optimization results obtained from the scalar diffraction theory for both the THz hologram and the THz diffractive lens. The demonstrated experimental results show that the proposed THz hologram and THz diffractive lens can generate the desired diffraction patterns. These diffractive structures have the potential to be applied in areas such as THz imaging, data storage, and displays. 

In this paper, we discuss flat programmable multi-level diffractive lenses (PMDL) enabled by phase change materials working in the near-infrared and visible ranges. The high real part refractive index contrast (Δn ∼ 0.6) of Sb₂S₃between amorphous and crystalline states, and extremely low losses in the near-infrared, enable the PMDL to effectively shift the lens focus when the phase of the material is altered between its crystalline and amorphous states. In the visible band, although losses can become significant as the wavelength is reduced, the lenses can still provide good performance as a result of their relatively small thickness (∼ 1.5λ to 3λ). The PMDL consists of Sb₂S₃concentric rings with equal width and varying heights embedded in a glass substrate. The height of each concentric ring was optimized by a modified direct binary search algorithm. The proposed designs show the possibility of realizing programmable lenses at design wavelengths from the near-infrared (850 nm) up to the blue (450 nm) through engineering PMDLs with Sb₂S₃. Operation at these short wavelengths, to the best of our knowledge, has not been studied so far in reconfigurable lenses with phase-change materials. Therefore, our results open a wider range of applications for phase-change materials, and show the prospect of Sb₂S₃for such applications. The proposed lenses are polarization insensitive and can have the potential to be applied in dual-functionality devices, optical imaging, and biomedical science. 

Abstract Deep neural networks (DNNs) have substantial computational requirements, which greatly limit their performance in resource-constrained environments. Recently, there are increasing efforts on optical neural networks and optical computing based DNNs hardware, which bring significant advantages for deep learning systems in terms of their power efficiency, parallelism and computational speed. Among them, free-space diffractive deep neural networks (D 2 NNs) based on the light diffraction, feature millions of neurons in each layer interconnected with neurons in neighboring layers. However, due to the challenge of implementing reconfigurability, deploying different DNNs algorithms requires re-building and duplicating the physical diffractive systems, which significantly degrades the hardware efficiency in practical application scenarios. Thus, this work proposes a novel hardware-software co-design method that enables first-of-its-like real-time multi-task learning in D 2 2NNs that automatically recognizes which task is being deployed in real-time. Our experimental results demonstrate significant improvements in versatility, hardware efficiency, and also demonstrate and quantify the robustness of proposed multi-task D 2 NN architecture under wide noise ranges of all system components. In addition, we propose a domain-specific regularization algorithm for training the proposed multi-task architecture, which can be used to flexibly adjust the desired performance for each task. 

In this work, we explore inverse designed reconfigurable digital metamaterial structures based on phase change material Sb₂Se₃for efficient and compact integrated nanophotonics. An exemplary design of a 1 × 2 optical switch consisting of a 3 µm x 3 µm pixelated domain is demonstrated. We show that: (i) direct optimization of a domain containing only Si and Sb₂Se₃pixels does not lead to a high extinction ratio between output ports in the amorphous state, which is owed to the small index contrast between Si and Sb₂Se₃in such a state. As a result, (ii) topology optimization, e.g., the addition of air pixels, is required to provide an initial asymmetry that aids the amorphous state's response. Furthermore, (iii) the combination of low loss and high refractive index change in Sb₂Se₃, which is unique among all phase change materials in the telecommunications 1550 nm band, translates into an excellent projected performance; the optimized device structure exhibits a low insertion loss (∼1.5 dB) and high extinction ratio (>18 dB) for both phase states. 

Abstract While terahertz spectroscopy can provide valuable information regarding the charge transport properties in semiconductors, its application for the characterization of low-conductive two-dimensional layers, i.e., σ_s <  < 1 mS, remains elusive. This is primarily due to the low sensitivity of direct transmission measurements to such small sheet conductivity levels. In this work, we discuss harnessing the extraordinary optical transmission through gratings consisting of metallic stripes to characterize such low-conductive two-dimensional layers. We analyze the geometric tradeoffs in these structures and provide physical insights, ultimately leading to general design guidelines for experiments enabling non-contact, non-destructive, highly sensitive characterization of such layers.